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1N5811US-E3-TR中文资料Rectifier Diode Switching 2-Pin 150V, 6A, 30ns B-MELF Bag T/R数据手册Microchip规格书

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厂商型号

1N5811US-E3-TR

功能描述

Rectifier Diode Switching 2-Pin 150V, 6A, 30ns B-MELF Bag T/R

制造商

Microchip Microchip Technology

中文名称

微芯科技 美国微芯科技公司

数据手册

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更新时间

2025-9-27 17:46:00

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1N5811US-E3-TR规格书详情

描述 Description

This “Ultrafast Recovery” rectifier diode series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated. The industry-recognized 6.0 amp rated rectifiers with working peak reverse voltages from 50 to 150 volts are hermetically sealed with void-less glass construction using an internal “Category 1” metallurgical bond. These devices are available in both surface mount MELF and leaded package configurations. Microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages.

特性 Features

JEDEC registered surface mount equivalent of 1N5807, 1N5809, 1N5811 series
Void-less hermetically sealed glass package
Quadruple-layer passivation
Extremely robust construction
Internal “Category 1” metallurgical bonds
JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/477
RoHS compliant versions available (commercial grade only)
JEDEC registered surface mount equivalent of 1N5807, 1N5809, 1N5811 series
Void-less hermetically sealed glass package
Quadruple-layer passivation
Extremely robust construction
Internal “Category 1” metallurgical bonds
JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/477
RoHS compliant versions available (commercial grade only

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