1N4737A-A

1.0WZENERDIODE

1N4737AG

ZENERDIODES

VZ:3.3to100V PD:1.0Watt FEATURES: •Siliconplanarpowerzenerdiodes. •Foruseinstabilizingandclippingcircuitswithhighpowerrating. •Standardzenervoltagetoleranceis±5 •Othertolerancesareavailableuponrequest. •Pb/RoHSFree

1N4737AG

VOLTAGE3.3~56V,1WHermeticallySealedGlassZenerVoltageRegulators

FEATURES ●ZenerVoltageRange3.3to56Volts ●Through-HoleDeviceTypeMounting ●HermeticallySealedGlass ●CompressionBondedConstruction ●AllExternalSurfacesAreCorrosionResistant AndLeadsAreReadilySolderable ●SolderHotDipTin(Sn)LeadFinish ●CathodeIndicatedBy

1N4737AG

HermeticallySealedGlassZenerVoltageRegulators

1N4737AG

HermeticallySealedGlassZenerVoltageRegulators

1N4737AG

VOLTAGE3.3~56V,1WHermeticallySealedGlassZenerVoltageRegulators

1N4737AG

1.0WZENERDIODE

PlanarDieConstruction 1.0WPowerDissipation 3.3V–100VNominalZenerVoltage 5StandardVzTolerance LowInductance ForUseinVoltageRegulatororReference PlasticCaseMaterialhasULFlammability ClassificationRating94V-0

1N4737A-G

SILICONZENERDIODE

VOLTAGE3.3to100VoltsPOWER1.0Watts FEATURES •Lowprofilepackage •Built-instrainrelief •Lowinductance •Hightemperaturesoldering:260°C/10secondsatterminals •GlasspackagehasUnderwritersLaboratoryFlammability Classification •Pbfreeproductareavailable:99Sn

1N4737A-G

Glasspassivatedchip.

ZenerVoltage:3.3to330Volts DCPower:1Watts RoHSDevice Features -Glasspassivatedchip. -Lowleakage. -Built-instrainrelief. -Lowinductance. -Highpeakreversepowerdissipation. -Foruseinstabilizingandclipping withhighpowerrating. Mechanicaldata -Case:Mol

1N4737A-G

SILICONZENERDIODE