PERFORMANCE SPECIFICATION

SCOPE Scope. This specification covers the performance requirements for silicon, diffused, switching diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device.

文件：102.66 Kbytes 页数：19 Pages

MICROSEMI

美高森美

COMPUTER DIODE Switching

文件：147.61 Kbytes 页数：3 Pages

MICROSEMI

美高森美

COMPUTER DIODE

文件：44.1 Kbytes 页数：1 Pages

MICROSEMI

美高森美

SWITCHING DIODE

文件：92.46 Kbytes 页数：1 Pages

MICROSEMI

美高森美

HIGH SPEED SWITCHING DIODES

FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 75 V • Repetitive peak reverse voltage:max. 75 V • Repetitive peak forward current:max. 450 mA. • Pb / RoHS Free

文件：66.55 Kbytes 页数：2 Pages

EIC

High-speed diodes

DESCRIPTION The 1N4531, 1N4532 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD68 (DO-34) packages. FEATURES • Hermetically sealed leaded glass SOD68 (DO-34) package • High switching speed: max. 4 ns • Continuous re

文件：127.38 Kbytes 页数：9 Pages

恩XP

Small Signal Devices

SWITCHING DIODES

文件：44.73 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON EPITAXIAL PLANAR DIODES

SILICON EPITAXIAL PLANAR DIODES Fast Switching Diode

文件：118.08 Kbytes 页数：1 Pages

SEMTECH_ELEC

先之科半导体

HIGH SPEED SWITCHING DIODES

FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 75 V • Repetitive peak reverse voltage:max. 75 V • Repetitive peak forward current:max. 450 mA. • Pb / RoHS Free

文件：30.58 Kbytes 页数：2 Pages

SYNSEMI

High-speed diodes

FEATURES •Hermetically sealed leaded glass SOD68 (DO-34) package •High switching speed: max. 4 ns •Continuous reverse voltage: max. 75 V •Repetitive peak reverse voltage: max. 75 V •Repetitive peak forward current: max. 450 mA.

文件：309.12 Kbytes 页数：10 Pages

NEXPERIA

安世