PERFORMANCE SPECIFICATION

SCOPE Scope. This specification covers the performance requirements for silicon, diffused, switching diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device.

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MICROSEMI

美高森美

COMPUTER DIODE Switching

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MICROSEMI

美高森美

SWITCHING DIODE

FEATURES • 1N4531 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/116 • SWITCHING DIODE • METALLURGICALLY BONDED • HERMETICALLY SEALED • DOUBLE PLUG CONSTRUCTION

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MICROSEMI

美高森美

HIGH SPEED SWITCHING DIODES

FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 75 V • Repetitive peak reverse voltage:max. 75 V • Repetitive peak forward current:max. 450 mA. • Pb / RoHS Free

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EIC

Hermetically Sealed

Features ● Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/116 ● Metallurgically Bonded ● Hermetically Sealed ● Double Plug Construction

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MA-COM

High-speed diodes

DESCRIPTION The 1N4531, 1N4532 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD68 (DO-34) packages. FEATURES • Hermetically sealed leaded glass SOD68 (DO-34) package • High switching speed: max. 4 ns • Continuous re

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恩XP

Switching diode

Features 1) Glass sealed envelope. (MSD, GSD) 2) High speed. 3) High reliability. Application High-speed switching

文件：38.69 Kbytes 页数：3 Pages

ROHM

罗姆

SILICON EPITAXIAL PLANAR DIODES

SILICON EPITAXIAL PLANAR DIODES Fast Switching Diode

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SEMTECH_ELEC

先之科半导体

HIGH SPEED SWITCHING DIODES

FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 75 V • Repetitive peak reverse voltage:max. 75 V • Repetitive peak forward current:max. 450 mA. • Pb / RoHS Free

文件：30.58 Kbytes 页数：2 Pages

SYNSEMI

High-speed diodes

FEATURES •Hermetically sealed leaded glass SOD68 (DO-34) package •High switching speed: max. 4 ns •Continuous reverse voltage: max. 75 V •Repetitive peak reverse voltage: max. 75 V •Repetitive peak forward current: max. 450 mA.

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NEXPERIA

安世