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1N4454-BP

400mW75VoltSiliconEpitaxialDiode

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

1N4454-TP

400mW75VoltSiliconEpitaxialDiode

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

1N4454UR

MetallurgicallyBonded

Features ●AvailableinJAN,JANTX,andJANTXVperMIL-PRF-19500/144 ●MetallurgicallyBonded ●HermeticallySealed ●DoublePlugConstruction

MA-COM

M/A-COM Technology Solutions, Inc.

1N4454UR

SEITCHINGDIODE

•1N4454URand4454UR-1AVAILABLEINJAN,JANTX,ANDJANTXVPERMIL-PRF-19500/144 •SWITCHINGDIODE •HERMETICALLYSEALED •METALLURGICALLYBONDED •DOUBLEPLUGCONSTRUCTION MAXIMUMRATINGS JunctionTemperature:-55°Cto+175°C StorageTemperature:-55°Cto+175°C OperatingCurrent:200mA

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N4454UR

SWITCHINGDIODE

CDI-DIODE

Compensated Deuices Incorporated

JAN1N4454

1N4454andIN4454-1AVAILABLEINJAN,JANTX,ANDJANTXV

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

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