High-speed diodes

DESCRIPTION The 1N4148 and 1N4448 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages. FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 4 ns • General applica

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恩XP

丝印：1N4148PH；Package：SOD27；High-speed diodes

FEATURES •Hermetically sealed leaded glass SOD27 (DO-35) package •High switching speed: max. 4 ns •General application •Continuous reverse voltage: max. 100 V •Repetitive peak reverse voltage: max. 100 V •Repetitive peak forward current: max. 450 mA.

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NEXPERIA

安世

丝印：1N4148PH；High-speed diodes

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PHI

PHI

SWITCHING DIODE VOLTAGE 75 Volts CURRENT 0.15 Ampere

VOLTAGE 75 Volts CURRENT 0.15 Ampere FEATURE * Small surface mounting type. (DO-35) * High speed. (TRR=4.0nSec Typ.) * Suitable for high packing density. * Maximum total power disspation is 500mW. * Peak forward current is 500mA. APPLICATION * Ultra high speed switching

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CHENMKO

力勤

HIGH SPEED SWITCHING DIODE

PRV : 100 Volts Io : 150 mA FEATURES : * Silicon Epitaxial Planar Diode * High reliability * Low reverse current * Low forward voltage drop * High speed switching * Pb / RoHS Free MECHANICAL DATA : Case: DO-34 Glass Case Weight: approx. 0.093g

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EIC

HIGH SPEED SWITCHING DIODE

PRV : 100 Volts Io : 150 mA FEATURES : * Silicon Epitaxial Planar Diode * High reliability * Low reverse current * Low forward voltage drop * High speed switching * Pb / RoHS Free MECHANICAL DATA : Case: DO-34 Glass Case Weight: approx. 0.093g

文件：29.86 Kbytes 页数：2 Pages

SYNSEMI