Diode and Rectifier Devices

Microchip

微芯科技

Package：轴向；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 600V 1A AXIAL

Semtech Corporation

Package：A，轴向；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 600V 1A AXIAL

MICROCHIP

微芯科技

Glass Passivated Junction Rectifier

IF(AV) 1.0 A VRRM 200 V to 1000 V IFSM 30 A IR 1.0 μA VF 1.0 V TJ max. 175 °C FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current, IR less than 0.1 μA • High forward surge capability

文件：76.83 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Glass Passivated Junction Plastic Rectifier

FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current, IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for d

文件：101.98 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

GLASS PASSIVATED JUNCTION RECTIFIER

Reverse Voltage - 200 to 1000 Volts Forward Current - 1.0 Ampere FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgically bonded construction ♦ Capable of meeting environmental standards of MIL-S-19500 ♦ Glass passivated cavit

文件：61.22 Kbytes 页数：2 Pages

GE

Glass Passivated Junction Rectifier

200V-1000V 1.0A FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current, IR less than 0.1 μA • High forward surge capability • Meets environmental standard MIL-S-19500 • Solder dip 275 °C m

文件：1.87513 Mbytes 页数：2 Pages

TAYCHIPST

泰迪斯电子

Package：DO-204AL，DO-41，轴向；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 600V 1A DO204AL

Vishay General Semiconductor - Diodes Division