丝印：1K；Package：SOT23；NPN general purpose transistors

FEATURES •Low current (max. 100 mA) •Low voltage (max. 50 V). APPLICATIONS •General purpose switching and amplification •Telephony and professional communication equipment. DESCRIPTION NPN transistor in a SOT23 plastic package.

文件：307.7 Kbytes 页数：8 Pages

NEXPERIA

安世

丝印：1K；Package：SOT1118；30 V P-channel MOSFET with pre-biased NPN transistor

1. General description P-channel enhancement mode Field-Effect Transistor (FET) in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Trench MOSFET

文件：725.2 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：1K；Package：SOT323；NPN general purpose transistors

FEATURES •Low current (max. 100 mA) •Low voltage (max. 50 V). APPLICATIONS •General purpose switching and amplification in e.g. telephony and professional communication equipment. DESCRIPTION NPN transistor in an SC-70; SOT323 plastic package.

文件：312.82 Kbytes 页数：7 Pages

NEXPERIA

安世

丝印：1K；Package：SOT-23；Ideally suited for automatic insertion

文件：450.11 Kbytes 页数：6 Pages

RECTRON

丽正

丝印：1K；Package：SOT-23；NPN general purpose Transistor

文件：2.06563 Mbytes 页数：4 Pages

LUGUANG

鲁光电子

丝印：1K；Package：SOT-23；NPN Plastic-Encapsulate Transistors

文件：1.35798 Mbytes 页数：5 Pages

JINGHENG

晶恒

丝印：1K；Package：TSLP-3-1；NPN Silicon AF Transistors

文件：183.85 Kbytes 页数：19 Pages

INFINEON

英飞凌

丝印：1K；Package：SOT-23；NPN General Purpose Amplifier

文件：253.45 Kbytes 页数：5 Pages

YANGJIE

扬杰电子

丝印：1K；Package：SOT-323；NPN Silicon Epitaxial Planar Transistor

文件：446.64 Kbytes 页数：5 Pages

GWSEMI

唯圣电子

丝印：1K；Package：SOT-323；NPN Silicon Epitaxial General Purpose Transistors

文件：1.84399 Mbytes 页数：13 Pages

FUTUREWAFER