丝印：1K；Package：SOT-23；Small Signal Transistors (NPN)

FEATURES ♦ NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. ♦ Especially suited for automatic insertion in thick- and thin-film circuits. ♦ These transistors are subdivided into three groups A, B and C according to their current gain. The typ

文件：301.49 Kbytes 页数：6 Pages

GE

丝印：1K；Package：SOT-23；Epoxy meets UL-94 V-0 flammability rating

NPN Silicon Epitaxial Transistor for switching and amplifier applications

文件：595.99 Kbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：1K；Package：SOT-23；General Purpose Transistors

General Purpose Transistors NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V – Machine Model: >400 V

文件：277.78 Kbytes 页数：6 Pages

FS

丝印：1K；Package：SOT143B；NPN general-purpose double transistors

Features * Low current (max. 100 mA) * Low voltage (max. 30 V) * Matched pairs

文件：2.29281 Mbytes 页数：13 Pages

NEXPERIA

安世

丝印：1K；Package：SC-79；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in an SOD523 (SC-79) ultra small and flat lead Surface- Mounted Device (SMD) plastic package. 2. Features and benefits • Total power dissipation: ≤ 300 mW • Tolerance series: approximately ± 5 • Working voltage range: nominal 1.8

文件：221.41 Kbytes 页数：10 Pages

NEXPERIA

安世

丝印：1K；Package：SOD523；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in an SOD523 (SC-79) ultra small and flat lead Surface- Mounted Device (SMD) plastic package. 2. Features and benefits • Total power dissipation: ≤ 300 mW • Tolerance series: approximately ± 5 • Working voltage range: nominal 1.8

文件：222.33 Kbytes 页数：10 Pages

NEXPERIA

安世

丝印：1K；Package：SOD-123FL；STANDARD RECTIFIER

Features · For surface mounted applications · Glass passivated junction · Low profile package · Ideal for automated placement · High temperature soldering guaranteed: 260℃/10 seconds, at terminals

文件：481.16 Kbytes 页数：2 Pages

DAESAN

丝印：1K；Silicon Planar Zener Diodes

FEATURES • Total power dissipation: Max. 200mW. • Wide zener reverse voltage range 2.0V to 75V. • Small plastic package suitable for surface mounted design. • Tolerance approximately±5

文件：537.22 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：1K；Package：fS6；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

丝印：1K；Package：SOT-23-5；Excellent EMI Immunity Rail-to-Rail Input, Open-Drain Output Low power CMOS Comparators

■ FEATURES (V+=3V, V-=0V, Ta=25°C) ●Rail-to-Rail Input ●Open-Drain Output ●Supply Current 6μA/ch typ. ●Propagation Delay 840ns typ. ●Operating Voltage 1.8 to 5.5V ●Input Offset Voltage 6mV max. ●Operating Temperature -40 to 125°C ●Integrated EMI filter EMIRR=62dB typ. @f=900MHz ●Package

文件：1.13506 Mbytes 页数：25 Pages

NJRC

日本无线