丝印：1Fs；Package：SOT-23；NPN Silicon AF Transistors

• For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856...-BC860...(PNP) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

文件：216.64 Kbytes 页数：8 Pages

Infineon

英飞凌

丝印：1Fs；Package：SOT-323；NPN Silicon AF Transistors

NPN Silicon AF Transistors ● For AF input stages and driver applications ● High current gain ● Low collector-emitter saturation voltage ● Low noise between 30 Hz and 15 kHz ● Complementary types: BC856W, BC857W, BC858W, BC859W, BC860W (PNP)

文件：229.84 Kbytes 页数：8 Pages

Infineon

英飞凌

丝印：1FS；Package：SC70(DCK)；INAx290 2.7-V to 120-V, 1.1-MHz, Ultra-Precise, Current-Sense Amplifier

1 Features • Wide common-mode voltage: – Operational voltage: 2.7 V to 120 V – Survival voltage: −20 V to +122 V • Excellent CMRR: – 160-dB DC – 85-dB AC at 50 kHz • Accuracy – Gain: • Gain error: ±0.1% (maximum) • Gain drift: ±5 ppm/°C (maximum) – Offset: • Offset voltage: ±12 μV

文件：2.51853 Mbytes 页数：45 Pages

TI

德州仪器

丝印：1FS；Package：SC70(DCK)；INAx290 2.7-V to 120-V, 1.1-MHz, Ultra-Precise, Current-Sense Amplifier

1 Features • Wide common-mode voltage: – Operational voltage: 2.7 V to 120 V – Survival voltage: −20 V to +122 V • Excellent CMRR: – 160-dB DC – 85-dB AC at 50 kHz • Accuracy – Gain: • Gain error: ±0.1% (maximum) • Gain drift: ±5 ppm/°C (maximum) – Offset: • Offset voltage: ±12 μV

文件：2.51853 Mbytes 页数：45 Pages

TI

德州仪器

丝印：1FS；Package：SC70(DCK)；INAx290 2.7-V to 120-V, 1.1-MHz, Ultra-Precise, Current-Sense Amplifier

1 Features • Wide common-mode voltage: – Operational voltage: 2.7 V to 120 V – Survival voltage: −20 V to +122 V • Excellent CMRR: – 160-dB DC – 85-dB AC at 50 kHz • Accuracy – Gain: • Gain error: ±0.1% (maximum) • Gain drift: ±5 ppm/°C (maximum) – Offset: • Offset voltage: ±12 μV

文件：2.51853 Mbytes 页数：45 Pages

TI

德州仪器

丝印：1FS；Package：SC70(DCK)；INAx290 2.7-V to 120-V, 1.1-MHz, Ultra-Precise, Current-Sense Amplifier

1 Features • Wide common-mode voltage: – Operational voltage: 2.7 V to 120 V – Survival voltage: −20 V to +122 V • Excellent CMRR: – 160-dB DC – 85-dB AC at 50 kHz • Accuracy – Gain: • Gain error: ±0.1% (maximum) • Gain drift: ±5 ppm/°C (maximum) – Offset: • Offset voltage: ±12 μV

文件：2.51853 Mbytes 页数：45 Pages

TI

德州仪器

丝印：1FS；Package：SC70(DCK)；INAx290 2.7-V to 120-V, 1.1-MHz, Ultra-Precise, Current-Sense Amplifier

1 Features • Wide common-mode voltage: – Operational voltage: 2.7 V to 120 V – Survival voltage: −20 V to +122 V • Excellent CMRR: – 160-dB DC – 85-dB AC at 50 kHz • Accuracy – Gain: • Gain error: ±0.1% (maximum) • Gain drift: ±5 ppm/°C (maximum) – Offset: • Offset voltage: ±12 μV

文件：2.51853 Mbytes 页数：45 Pages

TI

德州仪器

丝印：1FS；Package：SC70(DCK)；INAx290 2.7-V to 120-V, 1.1-MHz, Ultra-Precise, Current-Sense Amplifier

1 Features • Wide common-mode voltage: – Operational voltage: 2.7 V to 120 V – Survival voltage: −20 V to +122 V • Excellent CMRR: – 160-dB DC – 85-dB AC at 50 kHz • Accuracy – Gain: • Gain error: ±0.1% (maximum) • Gain drift: ±5 ppm/°C (maximum) – Offset: • Offset voltage: ±12 μV

文件：2.51853 Mbytes 页数：45 Pages

TI

德州仪器

丝印：1Fs；Package：SOT-23；NPN Silicon AF Transistors

文件：183.85 Kbytes 页数：19 Pages

Infineon

英飞凌

丝印：1Fs；Package：SOT-323；NPN Silicon AF Transistors

文件：183.85 Kbytes 页数：19 Pages

Infineon

英飞凌