1ED21X7X中文资料英飞凌数据手册PDF规格书

特性 Features

• Infineon thin-film-SOI-technology

• Maximum blocking voltage +650 V

• Output source/sink current +4 A/ -4 A

• Maximum supply voltage of 25 V

• Integrated ultra-fast, low RDS(ON) Bootstrap Diode

• Negative VS transient immunity of 100 V

• Detection of over current and under voltage supply

• Multi-function RCIN/Fault/Enable (RFE) with

programmable fault clear time

• Less than 100 ns propagation delay

• DSO-8 package

• RoHS compliant