650 V high-side gate driver with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD)

Features • Infineon thin-film-SOI-technology • Maximum blocking voltage +650 V • Output source/sink current +4 A/ -4 A • Maximum supply voltage of 25 V • Integrated ultra-fast, low RDS(ON) Bootstrap Diode • Negative VS transient immunity of 100 V • Detection of over current and under voltag

文件：678.92 Kbytes 页数：21 Pages

INFINEON

英飞凌

650 V high-side gate driver with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD)

Features • Infineon thin-film-SOI-technology • Maximum blocking voltage +650 V • Output source/sink current +4 A/ -4 A • Maximum supply voltage of 25 V • Integrated ultra-fast, low RDS(ON) Bootstrap Diode • Negative VS transient immunity of 100 V • Detection of over current and under voltag

文件：678.92 Kbytes 页数：21 Pages

INFINEON

英飞凌

650 V 高端栅极驱动器 IC，具有过流保护 (OCP)、多功能 RCIN/故障/启用 (RFE) 和集成自举二极管 (BSD)

• Infineon thin-film-SOI-technology\n• Maximum blocking voltage +650 V\n• Output source/sink current +4 A/ -4 A\n• Maximum supply voltage of 25 V\n• Integrated Bootstrap Diode\n• Negative VS transient immunity of 100 V\n• Over current & under voltage protection\n• Multi-function RFE pin functionalit;

Infineon

英飞凌

8-SOIC

INFINEON

英飞凌

上传：深圳市智创诚芯电子科技有限公司

8DSOA

英飞凌/实单必成

上传：深圳市拓芯泰电子科技有限公司