丝印：1D26；Package：VSSOP(DGK)；INAx180 Low- and High-Side Voltage Output, Current-Sense Amplifiers

1 Features • Common-mode range (VCM): –0.2 V to +26 V • High bandwidth: 350 kHz (A1 devices) • Offset voltage: – ±150 μV (maximum) at VCM = 0 V – ±500 μV (maximum) at VCM = 12 V • Output slew rate: 2 V/μs • Accuracy: – ±1% gain error (maximum) – 1-μV/°C offset drift (maximum) • Gain

文件：3.02564 Mbytes 页数：53 Pages

TI

德州仪器

丝印：1D26；Package：VSSOP(DGK)；INAx180 Low- and High-Side Voltage Output, Current-Sense Amplifiers

1 Features • Common-mode range (VCM): –0.2 V to +26 V • High bandwidth: 350 kHz (A1 devices) • Offset voltage: – ±150 μV (maximum) at VCM = 0 V – ±500 μV (maximum) at VCM = 12 V • Output slew rate: 2 V/μs • Accuracy: – ±1% gain error (maximum) – 1-μV/°C offset drift (maximum) • Gain

文件：3.02564 Mbytes 页数：53 Pages

TI

德州仪器

丝印：1D26；Package：VSSOP(DGK)；INAx180 Low- and High-Side Voltage Output, Current-Sense Amplifiers

1 Features • Common-mode range (VCM): –0.2 V to +26 V • High bandwidth: 350 kHz (A1 devices) • Offset voltage: – ±150 μV (maximum) at VCM = 0 V – ±500 μV (maximum) at VCM = 12 V • Output slew rate: 2 V/μs • Accuracy: – ±1% gain error (maximum) – 1-μV/°C offset drift (maximum) • Gain

文件：3.02564 Mbytes 页数：53 Pages

TI

德州仪器

丝印：1D2N04CL；Package：LFPAK8；MOSFET ??Power, Single N-Channel 40 V, 1.2 m, 237 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：374.42 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D24C；Package：TCPAK57；MOSFET – Power, Single N-Channel 40 V, 1.25 m, 451 A

Features • Small Footprint (5x7 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • TCPAK57 5x7 Top Cool Package • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：327.79 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D2N04CL；Package：LFPAK4；MOSFET ??Power, Single N-Channel 40 V, 1.1 m, 258 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：342.62 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D26；Package：VSSOP；Low- and High-Side Voltage Output, Current-Sense Amplifiers

文件：1.37467 Mbytes 页数：40 Pages

TI

德州仪器

丝印：1D26；Package：VSSOP；INAx180 Low- and High-Side Voltage Output, Current-Sense Amplifiers

文件：3.01627 Mbytes 页数：51 Pages

TI

德州仪器

丝印：1D26；Package：VSSOP；INAx180 Low- and High-Side Voltage Output, Current-Sense Amplifiers

文件：3.01627 Mbytes 页数：51 Pages

TI

德州仪器

丝印：1D26；Package：VSSOP；Low- and High-Side Voltage Output, Current-Sense Amplifiers

文件：1.37467 Mbytes 页数：40 Pages

TI

德州仪器