19N10L-TMS-T技术资料参数原装现货友顺UTC-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
19N10L-TMS-T	文件：333.11 Kbytes Page：8 Pages	N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE 文件：333.11 Kbytes 页数：8 Pages	UTC 友顺	UTC
19N10V	文件：227.57 Kbytes Page：6 Pages	100V N-Channel MOSFET 文件：227.57 Kbytes 页数：6 Pages	UTC 友顺	UTC
FQB19N10	文件：575.39 Kbytes Page：9 Pages	100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs 文件：575.39 Kbytes 页数：9 Pages	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB19N10	文件：333.04 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=19A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.1Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv 文件：333.04 Kbytes 页数：2 Pages	ISC 无锡固电	ISC

更多19N10L-TMS-T供应商更新时间2025-10-5 14:02:00