CSD19538Q2R

Marking：1958；Package：WSON；CSD19538Q2 100V N-Channel NexFET™ Power MOSFET

1Features •Ultra-lowQgandQgd •Low-thermalresistance •Avalancherated •Leadfree •RoHScompliant •Halogenfree •SON2mm×2mmplasticpackage 2Applications •Poweroverethernet(PoE) •Powersourcingequipment(PSE) •Motorcontrol Description This100V,49mΩ,SON2mm

CSD19538Q2T

Marking：1958；Package：WSON；CSD19538Q2 100V N-Channel NexFET™ Power MOSFET

1Features •Ultra-lowQgandQgd •Low-thermalresistance •Avalancherated •Leadfree •RoHScompliant •Halogenfree •SON2mm×2mmplasticpackage 2Applications •Poweroverethernet(PoE) •Powersourcingequipment(PSE) •Motorcontrol Description This100V,49mΩ,SON2mm

GAN190-650EBE

Marking：190IEBE；Package：SOT8074-1；650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

1.Generaldescription TheGAN140-650EBEisageneralpurpose650V,190mΩGalliumNitride(GaN)FETina DFN8mmx8mmsurfacemountpackage.Itisanormally-offe-modedeviceofferingsuperior performance. 2.Featuresandbenefits •Enhancementmode-normally-offpowerswitch •Ultra

GAN190-650FBE

Marking：190IFBE；Package：SOT8075-1；650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

1.Generaldescription TheGAN190-650FBEisageneralpurpose650V,190mΩGalliumNitride(GaN)FETina DFN5mmx6mmsurfacemountpackage.Itisanormally-offe-modedeviceofferingsuperior performance. 2.Featuresandbenefits •Enhancementmode-normally-offpowerswitch •Ultra

IGC019S06S1

Marking：19SC1；Package：PG-TSON-6；CoolGaNTM Transistor 60 V G3

Features •Enhancementmodepowertransistor-normallyOFFswitch •Noreverserecoverycharge •Reverseconductioncapability •Lowgatecharge,lowoutputcharge •QualifiedaccordingtoJEDECfortargetapplications

IPB19DP10NM

Marking：19DP10NM；Package：PG-TO263-3；OptiMOS Power-Transistor,-100V

Features *p-channel *100avalanchetested *Nomallevel *Enhancementmode *Pb-freeleadplating;RoHScompliant *Halogen-freeaccordingtoIEC61249-2-21

IPD19DP10NM

Marking：19DP10NM；Package：PG-TO252-3；OptiMOS Power-Transistor,-100V

Features *P-channel *100avalanchetested *Normallevel *Enhancementmode *Pb-freeleadplating;RoHScompliant *Halogen-freeaccordingtoIEC61249-2-21

ISL55190IRZ

Marking：190Z；Package：DFN；Single and Dual Ultra-Low Noise, Ultra-Low Distortion, Low Power Op Amp

Features •1.2nV/Hzinputvoltagenoise,fO=1kHz •HarmonicDistortion-95dBc,-92dBc,fO=4MHz •Stableatgainsaslowas5 •800MHzgainbandwidthproduct(AV=5) •268V/μstypicalslewrate •16mAtypicalsupplycurrent(21μAindisablemode) •300μVtypicaloffsetvoltage •25μA

ISL55190IRZ-T13

Marking：190Z；Package：DFN；Single and Dual Ultra-Low Noise, Ultra-Low Distortion, Low Power Op Amp

Features •1.2nV/Hzinputvoltagenoise,fO=1kHz •HarmonicDistortion-95dBc,-92dBc,fO=4MHz •Stableatgainsaslowas5 •800MHzgainbandwidthproduct(AV=5) •268V/μstypicalslewrate •16mAtypicalsupplycurrent(21μAindisablemode) •300μVtypicaloffsetvoltage •25μA

ISL55191IRZ

Marking：191Z；Package：DFN；Single and Dual Ultra-Low Noise, Ultra-Low Distortion, Rail-to-Rail, Low Power Op

Features •1.3nV/Hzinputvoltagenoise,fO=1kHz •HarmonicDistortion-94dBc,-104dBc,fO=1MHz •Stableatgainsaslowas10 •800MHzgainbandwidthproduct(AV=10) •260V/μsslewrate •6.1mAsupplycurrent(21μAindisablemode) •800μVmaximumoffsetvoltage •12μAinputbiasc