STB19NF20

Marking：19NF20；Package：D2PAK；N-channel 200 V, 0.11 Ω, 15 A, MESH OVERLAY™ Power MOSFETs in D2PAK, DPAK, TO‑220FP and TO-220 packages

Features •Extremelyhighdv/dtcapability •Gatechargeminimized •Verylowintrinsiccapacitance Applications •Switchingapplications Description ThesePowerMOSFETsaredesignedusingSTMicroelectronics'consolidatedstriplayout- basedMESHOVERLAY™process.Theresultisa

STD19NF20

Marking：19NF20；Package：DPAK；N-channel 200 V, 0.11 Ω, 15 A, MESH OVERLAY™ Power MOSFETs in D2PAK, DPAK, TO‑220FP and TO-220 packages

Features •Extremelyhighdv/dtcapability •Gatechargeminimized •Verylowintrinsiccapacitance Applications •Switchingapplications Description ThesePowerMOSFETsaredesignedusingSTMicroelectronics'consolidatedstriplayout- basedMESHOVERLAY™process.Theresultisa

STF19NF20

Marking：19NF20；Package：TO-220FP；N-channel 200 V, 0.11 Ω, 15 A, MESH OVERLAY™ Power MOSFETs in D2PAK, DPAK, TO‑220FP and TO-220 packages

Features •Extremelyhighdv/dtcapability •Gatechargeminimized •Verylowintrinsiccapacitance Applications •Switchingapplications Description ThesePowerMOSFETsaredesignedusingSTMicroelectronics'consolidatedstriplayout- basedMESHOVERLAY™process.Theresultisa

STP19NF20

Marking：19NF20；Package：TO-220；N-channel 200 V, 0.11 Ω, 15 A, MESH OVERLAY™ Power MOSFETs in D2PAK, DPAK, TO‑220FP and TO-220 packages

Features •Extremelyhighdv/dtcapability •Gatechargeminimized •Verylowintrinsiccapacitance Applications •Switchingapplications Description ThesePowerMOSFETsaredesignedusingSTMicroelectronics'consolidatedstriplayout- basedMESHOVERLAY™process.Theresultisa

STW19NM60N

Marking：19NM60N；Package：TO-24；Automotive-grade N-channel 600 V, 0.26 廓 typ., 13 A MDmesh??II Power MOSFET in a TO-247 package

Description ThisdeviceisanN-channelPowerMOSFET developedusingthesecondgenerationof MDmesh™technology.ThisrevolutionaryPower MOSFETassociatesaverticalstructuretothe company’sstriplayouttoyieldoneoftheworld’s loweston-resistanceandgatecharge.Itis therefores

SUD19P06-60

Marking：19P06-60；Package：TO-252；P-Channel Enhancement Mode MOSFET

Features VDS=-60V,ID=-18A RDS(ON)52m@VGs=-10V(Typ)

TLV1922DSGR

Marking：1922；Package：WSON；TLV192x Family of 65V Comparators with Integrated 2.5V Voltage Reference

1Features •Widesupplyrange:3.3Vto65V •Fail-safeinputsupto65V •Open-drainoutputupto65V •2.5V,1.5%,100ppmmaximumvoltagereference •Referenceoutputcandriveupto1mA •3mVinputoffsetvoltage •900nspropagationdelay •Power-on-resetprovidesaknownstartupco

TLV7031DCKR

Marking：19P；Package：SC70；TLV703x and TLV704x Small-Size, Nanopower, Low-Voltage Comparators

1Features •Ultra-smallX2SON,WSON,WQFNpackages •Widesupplyvoltagerangeof1.6Vto6.5V •Quiescentsupplycurrentof315nA •Lowpropagationdelayof3μs •Rail-to-railcommon-modeinputvoltage •Internalhysteresis •Push-pulloutput(TLV703x) •Open-drainoutput(TLV704x) •No

TLV7031DCKR

Marking：19P；Package：SC70；TLV703x and TLV704x Small-Size, Nanopower, Low-Voltage Comparators

1Features •Ultra-smallX2SON,WSON,WQFNpackages •Widesupplyvoltagerangeof1.6Vto6.5V •Quiescentsupplycurrentof315nA •Lowpropagationdelayof3μs •Rail-to-railcommon-modeinputvoltage •Internalhysteresis •Push-pulloutput(TLV703x) •Open-drainoutput(TLV704x) •No

TLV7031DCKT

Marking：19P；Package：SC70；TLV703x and TLV704x Small-Size, Nanopower, Low-Voltage Comparators

1Features •Ultra-smallX2SON,WSON,WQFNpackages •Widesupplyvoltagerangeof1.6Vto6.5V •Quiescentsupplycurrentof315nA •Lowpropagationdelayof3μs •Rail-to-railcommon-modeinputvoltage •Internalhysteresis •Push-pulloutput(TLV703x) •Open-drainoutput(TLV704x) •No