N-CHANNEL ENHANCEMENT MODE POWER MOSF

▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free Description AP18N20 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It p

文件：73.58 Kbytes 页数：5 Pages

A-POWER

富鼎先进电子

N-Channel 200 V (D-S) MOSFET

文件：1.66263 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

N-Channel 200V (D-S) MOSFET

文件：1.45818 Mbytes 页数：6 Pages

VBSEMI

微碧半导体

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description\nAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low volta

APEC

富鼎先进

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

BVDSS 200V\nRDS(ON) 170mΩ\nID 18ADescription\nAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package is widely preferred for commercial-industrial through h

APEC

富鼎先进