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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
UPD168001	文件：289.9 Kbytes Page：22 Pages	MOSINTEGRATEDCIRCUIT FEATURES -FourHbridgecircuitsusingpowerMOSFETandlow-sideswitch -Lowon-resistance 4-chHbridge:2ΩMAX.(sumofupperandlowerstages) Low-sideswitch:2ΩMAX. -High-speedPWMdrive:Operatingfrequencyupto120kHz -Thin30-pinshrinkSOP(7.62mm(300)with0.65mmpitch)	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
UPD168001	文件：138.25 Kbytes Page：20 Pages	MONOLITHIC4-CHANNELHBRIDGELOW-SIDESWITCH DESCRIPTION TheµPD168001isamonolithic4-channelHbridgedriverandlow-sideswitchICthatusesapowerMOSFETattheoutputstage.BecauseoftheMOSFETattheoutputstage,boththeinputsandoutputsareinterfacedbyPWMdigitalsignals,andthepowerconsumptioncanthereforebelowered	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC

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UPD168001

文件：289.9 Kbytes

Page：22 Pages

MOSINTEGRATEDCIRCUIT

FEATURES -FourHbridgecircuitsusingpowerMOSFETandlow-sideswitch -Lowon-resistance 4-chHbridge:2ΩMAX.(sumofupperandlowerstages) Low-sideswitch:2ΩMAX. -High-speedPWMdrive:Operatingfrequencyupto120kHz -Thin30-pinshrinkSOP(7.62mm(300)with0.65mmpitch)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

UPD168001

文件：138.25 Kbytes

Page：20 Pages

MONOLITHIC4-CHANNELHBRIDGELOW-SIDESWITCH

DESCRIPTION TheµPD168001isamonolithic4-channelHbridgedriverandlow-sideswitchICthatusesapowerMOSFETattheoutputstage.BecauseoftheMOSFETattheoutputstage,boththeinputsandoutputsareinterfacedbyPWMdigitalsignals,andthepowerconsumptioncanthereforebelowered

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

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