CoolMOS Power Transistor

Features • Low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant

文件：282.69 Kbytes 页数：10 Pages

INFINEON

英飞凌

丝印：15N65C3；Package：PG-TO220-3-31；CoolMOS Power Transistor

Features • Low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant

文件：282.69 Kbytes 页数：10 Pages

INFINEON

英飞凌

Optimized for 20-60kHz Switching

文件：188.7 Kbytes 页数：6 Pages

IXYS

艾赛斯

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F package • Low input capacitance and gate charge • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：260.87 Kbytes 页数：2 Pages

ISC

无锡固电

CoolMOS Power Transistor

Features • Low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant

文件：282.69 Kbytes 页数：10 Pages

INFINEON

英飞凌