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型号	下载订购	功能描述	制造商上传企业	LOGO
15J321	文件：311.69 Kbytes Page：7 Pages	High Power Switching Applications Fast Switching Applications High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Fast switching (FS • Enhancement mode type • High speed: tf = 0.03 μs (typ.) • Low saturation Voltage: VCE (sat) = 1.90 V (typ.) • FRD included between emitter and collector 文件：311.69 Kbytes 页数：7 Pages	TOSHIBA 东芝	TOSHIBA
15J321	文件：195.46 Kbytes Page：7 Pages	Silicon N Channel IGBT High Power Switching Applications 文件：195.46 Kbytes 页数：7 Pages	TOSHIBA 东芝	TOSHIBA
GT15J321	文件：1.58274 Mbytes Page：73 Pages	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf 文件：1.58274 Mbytes 页数：73 Pages	TOSHIBA 东芝	TOSHIBA
GT15J321	文件：311.69 Kbytes Page：7 Pages	High Power Switching Applications Fast Switching Applications High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Fast switching (FS • Enhancement mode type • High speed: tf = 0.03 μs (typ.) • Low saturation Voltage: VCE (sat) = 1.90 V (typ.) • FRD included between emitter and collector 文件：311.69 Kbytes 页数：7 Pages	TOSHIBA 东芝	TOSHIBA

更多15J321供应商更新时间2026-1-27 11:04:00