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LM158D

Marking:158;Package:SO-8;Low Power Dual Operational Amplifiers

■Internallyfrequencycompensated ■LargeDCvoltagegain:100dB ■Widebandwidth(unitygain):1.1mHz (temperaturecompensated) ■Verylowsupplycurrent/op(500μA)essentially independentofsupplyvoltage ■Lowinputbiascurrent:20nA (temperaturecompensated) ■Lowinputoffsetvolta

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

LM158DT

Marking:158;Package:SO-8;Low Power Dual Operational Amplifiers

■Internallyfrequencycompensated ■LargeDCvoltagegain:100dB ■Widebandwidth(unitygain):1.1mHz (temperaturecompensated) ■Verylowsupplycurrent/op(500μA)essentially independentofsupplyvoltage ■Lowinputbiascurrent:20nA (temperaturecompensated) ■Lowinputoffsetvolta

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

LM158DT

Marking:158;Package:SO8;Low-power dual operational amplifiers

Features Frequencycompensationimplementedinternally LargeDCvoltagegain:100dB Widebandwidth(unitygain):1.1MHz(temperaturecompensated) Verylowsupplycurrentperchannelessentiallyindependentofsupplyvoltage Lowinputbiascurrent:20nA(temperaturecompensated) Lowinput

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

MK1581-01GILF

Marking:15810GIL;Package:TSSOP;LOW PHASE NOISE T1/E1 CLOCK GENERATOR

Features •GeneratesaT1(1.544MHz)orE1(2.048MHz)output clockfroman8kHzframeclockinput •Configurablejitterattenuationcharacteristics,excellent foruseasaStratumsourcede-jittercircuit •VCXO-basedclockgenerationensuresverylowjitterand phasenoisegeneration •O

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

MK1581-01GILFTR

Marking:15810GIL;Package:TSSOP;LOW PHASE NOISE T1/E1 CLOCK GENERATOR

Features •GeneratesaT1(1.544MHz)orE1(2.048MHz)output clockfroman8kHzframeclockinput •Configurablejitterattenuationcharacteristics,excellent foruseasaStratumsourcede-jittercircuit •VCXO-basedclockgenerationensuresverylowjitterand phasenoisegeneration •O

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

STH15810-2

Marking:15810;Package:H2PAK-2;N-channel 100 V, 0.0034 Ω typ., 110 A, STripFET™ F7 Power MOSFET in a H2PAK-2 package

Features •100avalanchetested •Ultralowon-resistance Applications •Switchingapplications Description ThisN-channelPowerMOSFETsutilize STripFET™F7technologywithanenhanced trenchgatestructurethatresultsinverylowonstate resistance,whilealsoreducinginternal ca

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STP15810

Marking:15810;Package:TO-220;N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET™ F7 Power MOSFET in a TO-220 package

Features •100avalanchetested •Ultralowon-resistance Applications •Switchingapplications Description ThisN-channelPowerMOSFETsutilizes STripFET™F7technologywithanenhanced trenchgatestructurethatresultsinverylowonstate resistance,whilealsoreducinginternal c

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

NCP1589AMNTWG

Marking:1589A;Package:DFN-103x3;Low Voltage Synchronous Buck Controller

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NCP1589AMNTWG

Marking:1589A;Package:DFN-103x3;Low Voltage Synchronous Buck Controller

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NCP1589BMNTWG

Marking:1589B;Package:DFN-103x3;Low Voltage Synchronous Buck Controller

ONSEMION Semiconductor

安森美半导体安森美半导体公司

产品属性

  • 产品编号:

    158

  • 制造商:

    JKL Components Corp.

  • 类别:

    光电器件 > 灯 - 白炽灯,氖灯

  • 包装:

    散装

  • 类型:

    白炽

  • 颜色:

    透明

  • 额定电压:

    14V

  • 透镜样式:

    圆形,带圆顶

  • 透镜尺寸:

    RT-3 1/4

  • 引线样式:

    楔形

  • 描述:

    LAMP INCAND RT-3.25 WEDGE 14V

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更多158供应商 更新时间2025-6-27 9:22:00