N-Channel Enhancement MOSFET

Application o Load switch « High Frequency Switching and Synchronous Rectification o Active Clamp in Intermediate « DC/DC Power Supplies

文件：2.86647 Mbytes 页数：4 Pages

TECHPUBLIC

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N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM150N30E uses advanced trench technology and design to provide excellent RDS(ON) wit

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ADV

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OptiMOS?? Power-Transistors

文件：325.25 Kbytes 页数：10 Pages

INFINEON

英飞凌

OptiMOS?? Power-Transistors

文件：325.64 Kbytes 页数：10 Pages

INFINEON

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