SPHV15-01ETG

Marking：15B；Package：DFN1006；BIDIRECTIONAL TVS DIODE

Features Ultralowleakage:nAlevel Operatingvoltage:15V Lowclampingvoltage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV –IEC61000-4-4(EFT)40A(5/50ns) –IEC61000-4-5(Lightning)6A(8/20μs) RoHSCompliant

SPHV15-01KTG

Marking：15B；Package：DFN1006；BIDIRECTIONAL TVS DIODE

Features Ultralowleakage:nAlevel Operatingvoltage:15V Lowclampingvoltage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV –IEC61000-4-4(EFT)40A(5/50ns) –IEC61000-4-5(Lightning)6A(8/20μs) RoHSCompliant

SPP15P10PG

Marking：15P10P；Package：PG-TO220-3；SIPMOS짰 Small-Signal-Transistor

Features .P-Channel •Enhancementmode •Normallevel •Avalancherated •Pb-freeleadplating;RoHScompliant *QualifiedaccordingtoAECQ101

SS15FA

Marking：15L；Package：SOD-123FL；Schottky Barrier Rectifiers, Surface Mount, 1 A, 50 V - 150 V

Features •LowPowerLoss,HighEfficiency •GuardRingforOvervoltageProtection •HighSurgeCurrentCapability •ULFlammability94V−0Classification •MSL1perJ−STD−020 •GreenMoldingCompound •TheseDevicesarePb−FreeandareRoHSCompliant

ST1510FX

Marking：1510FX；Package：ISOWATT218FX；High voltage fast-switching NPN Power transistor

Description ThedeviceismanufacturedusingDiffusedCollectorinPlanartechnologyadoptingnewandenhancedhighvoltagestructure1(E.H.V.S.1). Generalfeatures ■State-of-the-arttechnology: –Diffusedcollector“Enhancedgeneration”EHVS1 ■Morestableperformancesversusoperating

STFU15NM65N

Marking：15NM65N；Package：TO-220FP；N-channel 650 V, 0.35 廓 typ., 12 A MDmesh??II Power MOSFET in a TO-220FP ultra narrow leads package

Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl

STH15810-2

Marking：15810；Package：H2PAK-2；N-channel 100 V, 0.0034 Ω typ., 110 A, STripFET™ F7 Power MOSFET in a H2PAK-2 package

Features •100avalanchetested •Ultralowon-resistance Applications •Switchingapplications Description ThisN-channelPowerMOSFETsutilize STripFET™F7technologywithanenhanced trenchgatestructurethatresultsinverylowonstate resistance,whilealsoreducinginternal ca

STLQ015M12R

Marking：1512；Package：SOT23-5L；150 mA, ultra low quiescent current linear voltage regulator

Description TheSTLQ015provides150mAofmaximumcurrentwithaninputvoltagerangefrom 1.5Vto5.5Vandatypicaldropoutvoltageof112mV.Thekeyfeatureofthisdevice isitsquiescentcurrent,whichisjust1.4μAatmaximumoutputcurrent.Thedeviceis stablewithaceramiccapaci

STLQ015M15R

Marking：1515；Package：SOT23-5L；150 mA, ultra low quiescent current linear voltage regulator

Description TheSTLQ015provides150mAofmaximumcurrentwithaninputvoltagerangefrom 1.5Vto5.5Vandatypicaldropoutvoltageof112mV.Thekeyfeatureofthisdevice isitsquiescentcurrent,whichisjust1.4μAatmaximumoutputcurrent.Thedeviceis stablewithaceramiccapaci

STLQ015M18R

Marking：1518；Package：SOT23-5L；150 mA, ultra low quiescent current linear voltage regulator

Description TheSTLQ015provides150mAofmaximumcurrentwithaninputvoltagerangefrom 1.5Vto5.5Vandatypicaldropoutvoltageof112mV.Thekeyfeatureofthisdevice isitsquiescentcurrent,whichisjust1.4μAatmaximumoutputcurrent.Thedeviceis stablewithaceramiccapaci