15N10B

Marking：15N10BTFYWCP；Package：TO-252；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The15N10BTO-252usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. Application ●Powerswitchingapplication ●Hardswitchedandhighfrequencycircuits ●Uninterruptiblepowersuppl

15N10G

Marking：15N10GTFYWCP；Package：TO-252；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The15N10Gusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas4.5V.Thisdeviceissuitableforuseasa Batteryprotectionorinotherswitchingapplication. Application Batteryswitch DC/DCconverter

15SQ045

Marking：15SQ045；Package：R-6；Schottky Diodes

FEATURES Highfrequencyoperation Lowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Guardringforenhancedruggednessandlongtermreliability Solderdip275°Cmax.7s,perJESD22-B106

1SMA150A

Marking：150A；Package：SMA；SURFACE MOUNT ZENER DIODE

ZenerVoltage-3.3to200VoltsPeakPulsePower-1.0W Features ◆Forsurfacemountedapplicationsinordertooptimizeboardspace ◆Lowprofilepackage ◆Built-instrainrelief ◆Glasspassivatedjunction ◆Lowinductance ◆TypicalIRlessthan5.0μAabove11V ◆Hightemperaturesolde

1SZ1160A

Marking：150A；Package：DO-214AC；SURFACE MOUNT SILICON ZENER DIODES

Vz:3.0-300Volts,Pd:1Watts Features ●Glasspassivatedchip ●Lowleakage ●Built-instrainrelief ●Lowinductance ●Highpeakreversepowerdissipation ●Lead(Pb)-freecomponent ●Foruseinstabilizingandclipping withhighpowerrating MechanicalData ●Case:Moldedpla

2STF1525

Marking：1525；Package：SOT-89；Low voltage high performance NPN power transistor

Description ThedeviceisaNPNtransistormanufactured usingnew“PB-HCD”(powerbipolarhighcurrent density)technology.Theresultingtransistor showsexceptionalhighgainperformances coupledwithverylowsaturationvoltage. Features ■Verylowcollector-emittersaturationvoltage

3.0SMC150

Marking：150；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES Forsurfacemountedapplicationsinordertooptimizeboard space. Lowprofilepackage. Glasspassivatedjunction. Lowinductance. 3000Wpeakpulsepowercapabilityat10x1000uswaveform, repetitionrate(dutycycles):0.01 PlasticpackagehasUnderwritersLaboratoryFlammability.

3.0SMC150A

Marking：150A；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES Forsurfacemountedapplicationsinordertooptimizeboard space. Lowprofilepackage. Glasspassivatedjunction. Lowinductance. 3000Wpeakpulsepowercapabilityat10x1000uswaveform, repetitionrate(dutycycles):0.01 PlasticpackagehasUnderwritersLaboratoryFlammability.

3.0SMC150C

Marking：150C；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES Forsurfacemountedapplicationsinordertooptimizeboard space. Lowprofilepackage. Glasspassivatedjunction. Lowinductance. 3000Wpeakpulsepowercapabilityat10x1000uswaveform, repetitionrate(dutycycles):0.01 PlasticpackagehasUnderwritersLaboratoryFlammability.

3.0SMC150CA

Marking：150CA；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES Forsurfacemountedapplicationsinordertooptimizeboard space. Lowprofilepackage. Glasspassivatedjunction. Lowinductance. 3000Wpeakpulsepowercapabilityat10x1000uswaveform, repetitionrate(dutycycles):0.01 PlasticpackagehasUnderwritersLaboratoryFlammability.