IPP147N12N3G芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
IPI147N12N3G	文件：365.38 Kbytes Page：11 Pages	丝印：147N12N；Package：PG-TO262-3；OptiMOS?? Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr 文件：365.38 Kbytes 页数：11 Pages	Infineon 英飞凌	Infineon
IPP147N12N3G	文件：365.38 Kbytes Page：11 Pages	丝印：147N12N；Package：PG-TO220-3；OptiMOS?? Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr 文件：365.38 Kbytes 页数：11 Pages	Infineon 英飞凌	Infineon
147N12N	文件：365.38 Kbytes Page：11 Pages	OptiMOS?? Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr 文件：365.38 Kbytes 页数：11 Pages	Infineon 英飞凌	Infineon

更多147N12N供应商更新时间2025-9-20 16:12:00