13N65-Q数据手册UTC中文资料规格书

描述 Description

The UTC 13N65-Q are N-Channel enhancement mode powerfield effect transistors (MOSFET) which are produced by usingUTC’s proprietary, planar stripe and DMOS technology.These devices are suited for high efficiency switch mode powersupply. To minimize on-state resistance, provide superior switchingperformance and withstand high energy pulse in the avalanche andcommutation mode, the advanced technology has been especiallytailored.

特性 Features

RDS(ON) < 0.85Ω @ VGS = 10V, ID = 6.5A Ultra low gate charge ( typical 42 nC ) Low reverse transfer capacitance ( CRSS = typical 25 pF ) Fast switching capability Avalanche energy specified Improved dv/dt capability, high ruggedness