首页 >1330(ROUGE)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SMDZenerDiode Features -Glasspassivatedchip. -Lowleakage. -Foruseinstabilizingandclippingwithhighpowerrating. -Built-instrainrelief. -Lowinductance. -Highpeakreversepowerdissipation. Mechanicaldata -Case:JEDECDO-214AC,moldedplastic. -Epoxy:UL94V-0rateflameretardant. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SiliconNPNepitaxialplanertype(Forlow-voltageoutputamplification) SiliconNPNepitaxialplanertype Forlow-voltageoutputamplification Formuting ForDC-DCconverter ■Features ●LowcollectortoemittersaturationvoltageVCE(sat). ●LowONresistanceRon. ●HighfowardcurrenttransferratiohFE. ●Mtypepackageallowingeasyautomaticandmanualin | PanasonicPanasonic Semiconductor 松下松下电器 | Panasonic | ||
10Watt,3.3VOutputDC-DCConverters | INTRONICS Intronics Power, Inc. | INTRONICS | ||
256kNonvolatileSRAMwithBatteryMonitor | DallasDallas Semiconductor 亚德诺亚德诺半导体 | Dallas | ||
256kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS1330256kNVSRAMsare262,144-bit,fullystatic,NVSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,thelithiu | DallasDallas Semiconductor 亚德诺亚德诺半导体 | Dallas | ||
256kNonvolatileSRAMwithBatteryMonitor | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
256KNonvolatileSRAMwithBatteryMonitor | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
3.3V256KNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS1330W3.3V256kNonvolatileSRAMisa262,144-bit,fullystatic,nonvolatileSRAMorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchacondi | DallasDallas Semiconductor 亚德诺亚德诺半导体 | Dallas | ||
3.3V256kNonvolatileSRAMwithBatteryMonitor | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
256kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS1330256kNVSRAMsare262,144-bit,fullystatic,NVSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,thelithiu | DallasDallas Semiconductor 亚德诺亚德诺半导体 | Dallas |
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