Non-isolated Thyristor Module

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NAINA

Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

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ONSEMI

安森美半导体

QFN

S

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SMD,P=1.27mm

Wcon

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NA

TE

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