NPN SILICON POWER TRANSISTOR

DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matr

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NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION

文件：156.44 Kbytes 页数：4 Pages

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NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION

文件：156.44 Kbytes 页数：4 Pages

UTC

友顺

NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION

文件：156.44 Kbytes 页数：4 Pages

UTC

友顺

NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION

文件：156.44 Kbytes 页数：4 Pages

UTC

友顺

NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION

文件：156.44 Kbytes 页数：4 Pages

UTC

友顺

NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION

文件：156.44 Kbytes 页数：4 Pages

UTC

友顺

NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION

文件：156.44 Kbytes 页数：4 Pages

UTC

友顺

NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION

文件：156.44 Kbytes 页数：4 Pages

UTC

友顺

NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION

文件：156.44 Kbytes 页数：4 Pages

UTC

友顺