3DD13003N3D-TU

Marking：13003N3D；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Powerswitchingapplications Goodhightemperature Lowsaturationvoltage Highspeedswitching

3DD13003N3-TU

Marking：13003N3；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Powerswitchingapplications Goodhightemperature Lowsaturationvoltage Highspeedswitching

APT13003HZTR-G1

Marking：13003HZ-G1；Package：TO92；465V NPN HIGH VOLTAGE POWER TRANSISTOR

Features •BVCEO>465V •BVCES>800V •BVEBO>9V •IC=1.5AHighContinuousCollectorCurrent •Lead-FreeFinish;RoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Forautomotiveapplicationsrequiringspecificchangecontrol(i.e.partsqualifiedtoAE

DXT13003DG-13

Marking：13003D；Package：SOT223；450V NPN HIGH VOLTAGE POWER TRANSISTOR IN SOT223

Features BVCEO>450V BVCES>700V BVEBO>9V IC=1.5AhighContinuousCollectorCurrent IntegratedCollector-EmitterDiodetoactasfree-wheelingdiode TotallyLead-Free&FullyRoHScompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3)

DXT13003EK-13

Marking：13003E；Package：TO252；460V NPN HIGH VOLTAGE POWER TRANSISTOR IN TO252

Features BVCEO>460V BVCES>700V BVEBO>9V IC=1.5AHighContinuousCollectorCurrent TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3)

ST13003DN

Marking：13003DN；Package：SOT-32；High voltage fast-switching NPN power transistor

Description Thedeviceismanufacturedusinghighvoltagemultiepitaxialplanartechnologyforhighswitchingspeedsandhighvoltagecapability.ItusesacellularemitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Features ■Highvolt