首页 >12N60D1C>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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12A,600VN-ChannelIGBTwithAnti-ParallelUltrafastDiode Description TheIGBTisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymo | Intersil Intersil Corporation | Intersil | ||
12A,600VN-ChannelIGBTwithAnti-ParallelUltrafastDiode Description TheIGBTisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymo | Intersil Intersil Corporation | Intersil | ||
12A,600VN-ChannelIGBT Description TheIGBTisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymode | Intersil Intersil Corporation | Intersil |
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