Power MOSFETs

FEATURES • Low Figure-of-Merit Ron x Qg • 100 Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved • Compliant to RoHS Directive 2002/95/EC

文件：328.62 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for target applications

文件：255 Kbytes 页数：11 Pages

INFINEON

英飞凌

N-Channel 650 V (D-S) MOSFET

文件：1.03243 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

Cool MOS™ Power Transistor

Feature\n• New revolutionary high voltage technology\n• Ultra low gate charge\n• Periodic avalanche rated\n• Extreme dv/dt rated\n• Ultra low effective capacitances\n• Improved transconductance\n• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)

Infineon

英飞凌