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HGTH12N40E1

10A,12A,400Vand500VN-ChannelIGBTs

Description TheHGTH12N40C1,HGTH12N40E1,HGTH12N50C1,HGTH12N50E1,HGTP10N40C1,HGTP10N40E1,HGTP10N50C1andHGTP10N50E1aren-channelenhancement-modeinsulatedgatebipolartransistors(IGBTs)designedforhigh-voltage,lowon-dissipationapplicationssuchasswitchingregulatorsandmotordri

Intersil

Intersil Corporation

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