丝印：120N06LS；Package：DFN5060-8L；60V N-Channel Enhancement Mode MOSFET

Feature  RDS(ON), VGS@10V, ID@20A

文件：1.36546 Mbytes 页数：7 Pages

PANJIT

強茂

Silicon N-Channel Power MOSFET

General Description： CS120N06 C8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system min

文件：378.51 Kbytes 页数：10 Pages

CRMICRO

华润微电子

N-Channel Enhancement Mode Power Mosfet

文件：3.99502 Mbytes 页数：7 Pages

FOSTER

福斯特半导体

60V N-Ch Power MOSFET

Feature ◇ High Speed Power Switching, Logic Level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ DC/DC in T

文件：911.54 Kbytes 页数：6 Pages

HUNTECK

恒泰柯半导体