丝印：120N03；Package：PDFN3x3-8L；MOSFET

Features - Super low gate charge. - Excellent Cdv/dt effect decline. - Advanced high cell density trench technology. - Green device available. - AEC-Q101 Qualified.

文件：514.58 Kbytes 页数：6 Pages

COMCHIP

典琦

Trench Mosfet

GOFORD

谷峰半导体

丝印：120N03MS；Package：TDSON-8；OptiMOS?? M-Series Power-MOSFET

文件：387.25 Kbytes 页数：10 Pages

Infineon

英飞凌

OptiMOS?? Power-MOSFET

文件：526.08 Kbytes 页数：10 Pages

Infineon

英飞凌

OptiMOS?? Power-MOSFET

Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel; Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanc

文件：389.96 Kbytes 页数：10 Pages

Infineon

英飞凌

OptiMOS?? Power-MOSFET

文件：526.08 Kbytes 页数：10 Pages

Infineon

英飞凌