1202E中文资料下载批发供应飞利浦VMI-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
1202E	文件：78.52 Kbytes Page：2 Pages	200 V - 1,000 V Single Phase Bridge 3.0 A Forward Current 70 ns - 3000 ns Recovery Time 200 V - 1,000 V Single Phase Bridge 3.0 A Forward Current 70 ns - 3000 ns Recovery Time 文件：78.52 Kbytes 页数：2 Pages	VMI	VMI
1202E	文件：300 bytes Page：1 Pages	200 V single phase bridge 3.0 A forward current, 3000 ns recovery time	VMI	VMI
BF1202	文件：116.05 Kbytes Page：16 Pages	N-channel dual-gate PoLo MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package 文件：116.05 Kbytes 页数：16 Pages	PHI PHI	PHI
BF1202R	文件：116.05 Kbytes Page：16 Pages	N-channel dual-gate PoLo MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package 文件：116.05 Kbytes 页数：16 Pages	PHI PHI	PHI
TEA1202	文件：123.15 Kbytes Page：24 Pages	Battery power unit 文件：123.15 Kbytes 页数：24 Pages	PHI PHI	PHI

型号：
1202E
制造商：
VMI
制造商全称：
VMI
功能描述：
200 V - 1,000 V Single Phase Bridge 3.0 A Forward Current 70 ns - 3000 ns Recovery Time

更多1202E供应商更新时间2026-10-19 11:10:00