200 V - 1,000 V Single Phase Bridge 3.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Single Phase Bridge 3.0 A Forward Current 70 ns - 3000 ns Recovery Time

文件：69.91 Kbytes 页数：2 Pages

VMI

200 V - 1,000 V Single Phase Bridge

文件：66.42 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

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N-channel dual-gate PoLo MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

文件：116.05 Kbytes 页数：16 Pages

PHI

PHI

N-channel dual-gate PoLo MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

文件：116.05 Kbytes 页数：16 Pages

PHI

PHI

Battery power unit

文件：123.15 Kbytes 页数：24 Pages

PHI

PHI