N-Channel 650 V (D-S) MOSFET

文件：1.033599 Mbytes 页数：8 Pages

VBSEMI

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N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.38Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：338.87 Kbytes 页数：2 Pages

ISC

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New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

文件：1.01964 Mbytes 页数：15 Pages

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Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：574.74 Kbytes 页数：15 Pages

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