43A, 1200V, NPT Series N-Channel IGBT

The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the lo

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Fairchild

仙童半导体

43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a b

文件：110.12 Kbytes 页数：8 Pages

Fairchild

仙童半导体

丝印：11N120CND；Package：TO-247；NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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ONSEMI

安森美半导体

43A, 1200V, NPT Series N-Channel IGBT

The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low • 43A, 1200V, TC = 25°C\n• 1200V Switching SOA Capability\n• Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150°C\n• Short Circuit Rating\n• Low Conduction Loss\n• Avalanche Rated\n• Thermal Impedance SPICE Model\n   Temperature Compensating SABER™ Model\n   www.intersil.com\n• Relat;

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