丝印：1133B5A；Package：SOIC；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection

1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri

文件：2.756 Mbytes 页数：40 Pages

TI1

德州仪器

丝印：1133B5A；Package：SOIC；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection

1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri

文件：2.72932 Mbytes 页数：41 Pages

TI

德州仪器

丝印：1133B5A；Package：SOIC；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection

1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri

文件：2.72987 Mbytes 页数：41 Pages

TI

德州仪器