600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pul

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FAIRCHILD

仙童半导体

CoolMOS Power MOSFET

Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge Features • Fast CoolMOS power MOSFET - 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) • Fully isolated pa

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IXYS

艾赛斯

CoolMOS Power MOSFET

Littelfuse

力特

Short Circuit Rated IGBT

General Description Fairchilds RUF series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters wher

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FAIRCHILD

仙童半导体

N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT

N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) ■ VERY LOW ON-VOLTAGE DROP (Vcesat) ■ LOW THRESHOLD VOLTAGE (LOGIC LEVEL INPUT) ■ HIGH CURRENT CAPABILITY ■ OFF LOSSES INCLUDE TAIL CURRENT APPLICATIONS ■ ELECTRONIC IGNITION ■ LIGHT DIMMER ■ STATIC RELAY

文件：88.65 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT

N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) ■ VERY LOW ON-VOLTAGE DROP (Vcesat) ■ LOW THRESHOLD VOLTAGE (LOGIC LEVEL INPUT) ■ HIGH CURRENT CAPABILITY ■ OFF LOSSES INCLUDE TAIL CURRENT APPLICATIONS ■ ELECTRONIC IGNITION ■ LIGHT DIMMER ■ STATIC RELAY

文件：88.65 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体