RF/Microwave GaN on SiC Power Devices, Pallets and Modules

The 1012GN-1000V is an internally matched, common-source, class-AB, GaN-on-SiC HEMT transistor capable of providing over 19 dB gain, 1000 W of pulsed RF output power at 32 ?s, and 2% duty cycle pulse format across the 1025 MHz to 1150 MHz band. The transistor has internal pre-match for optimal p

Microchip

微芯科技

SMD

AMPHENOL/安费诺

上传：深圳市亿联芯电子科技有限公司

SMD

AMPHENOL/安费诺

上传：深圳市亿联芯电子科技有限公司

AMPHENOFCI

上传：深圳市三芯电子有限公司

AMPHENOFCI

上传：深圳市三芯电子有限公司