丝印：10111ND；Package：TO-252-2L；14A, 100V N-CHANNEL MOSFET

DESCRIPTION SVT10111ND is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and withsta

文件：317.03 Kbytes 页数：8 Pages

SILAN

士兰微

WATERPROOF D-SUB CONNECTOR

文件：350.71 Kbytes 页数：1 Pages

ASSMANNAssmann Electronics Inc.

阿斯曼电子

High Accuracy, Low Power, Barometric Pressure and Temperature Sensor IC

GENERAL INFORMATION The ICP-10111 pressure sensor family is based on MEMS capacitive technology which provides ultra-low noise at the lowest power, enabling industry leading relative accuracy, sensor throughput, and temperature stability. The pressure sensor can measure pressure differences w

文件：995.08 Kbytes 页数：31 Pages

TDK

东电化

Dual 3?묲nput/3?뭀uput NOR Gate

The MC10111 is designed to drive up to three transmission lines simul− taneously. The multiple outputs of this device also allow the wire “OR”−ing of several levels of gating for minimization of gate and package count. The ability to control three parallel lines from a single point makes the MC10

文件：162.46 Kbytes 页数：5 Pages

ONSEMI

安森美半导体