丝印：101111；Package：DFN1010D-3；50 V, 100 mA NPN resistor-equipped transistors

General description 100 mA NPN Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Features and benefits ■ 100 mA output current capability ■ Reduced pick and place costs

文件：2.76058 Mbytes 页数：22 Pages

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丝印：101101；Package：DFN1010D-3；50 V, 100 mA NPN resistor-equipped transistors

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduced pick and place costs  Low package height of 0.37 mm  AEC-Q101 qualified  Suitable for Automatic Optical Inspection (AOI) of solder joint

文件：2.78427 Mbytes 页数：21 Pages

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丝印：10111ND；Package：TO-252-2L；14A, 100V N-CHANNEL MOSFET

DESCRIPTION SVT10111ND is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and withsta

文件：317.03 Kbytes 页数：8 Pages

SILAN

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丝印：101101；Package：DFN1010D-3；50 V, 100 mA NPN resistor-equipped transistors

文件：2.78525 Mbytes 页数：21 Pages

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螺钉式接线端子

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