APT10050LVFR

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=21A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

APT10050LVR

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=21A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.5Ω(Max)@VGS=10V APPLICATIONS ·MotorDrive,DC-DCConverter,PowerSwitch andSolenoidDrive.

APT10050LVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching

DEM10050C

10.3x10.3mmMax.square,5.0mmMax.height.

DVCR10050-LF

ELECTROLYTIC-85째C

DVJL10050-LF

SURFACEMOUNTSMD-105CLOWIMPEDANCEDVJL

DVJL10050-LF

SMD-105째CLOWIMPEDANCE

DVJR10050-LF

ELECTROLYTIC105째CREDUCEDSIZE

DVJR10050-LF

SURFACEMOUNTELECTROLYTIC105CREDUCEDSIZEDVJR

IPL10050CE

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