丝印：082；WE-MCRI SMT Molded Coupled Inductor

General Information: Ambient Temperature (referring to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：645.05 Kbytes 页数：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：082N10NS；Package：PG-TO220FullPAK；StrongIRFETTM2Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.06425 Mbytes 页数：10 Pages

Infineon

英飞凌

丝印：082N10N；Package：TO-252；100V N-Channel MOSFET

Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • 175 °C operating temperature • Ideal for high-frequency switching and synchronous rectification • VDS=100V • ID(at VGS=10V)=80A • RDS(ON) (at VGS=10V)

文件：485.69 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：082N10NS；Package：PG-TO220-3；StrongIRFETTM2Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.07489 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：082A；Package：SOP8；LOW NOISE, J-FET INPUT OPERATIONAL AMPLIFIERS

FEATURES ●Wide Power Supply Range ±4 to ±18V ●Internal ESD Protection Human Body Model (HBM) ±2000V typ. ●High Input Resistance 1012Ω typ. ●Wide Temperature Range -40°C to 125°C ●Bipolar Technology ●High Slew Rate 13V/μs typ. ●Wide Unity Gain Bandwidth 3MHz typ. ●Package NJM072C/072CA/08

文件：1.84421 Mbytes 页数：21 Pages

NJRCNew Japan Radio

新日本无线株式会社

丝印：082A；Package：SSOP8；LOW NOISE, J-FET INPUT OPERATIONAL AMPLIFIERS

FEATURES ●Wide Power Supply Range ±4 to ±18V ●Internal ESD Protection Human Body Model (HBM) ±2000V typ. ●High Input Resistance 1012Ω typ. ●Wide Temperature Range -40°C to 125°C ●Bipolar Technology ●High Slew Rate 13V/μs typ. ●Wide Unity Gain Bandwidth 3MHz typ. ●Package NJM072C/072CA/08

文件：1.84421 Mbytes 页数：21 Pages

NJRCNew Japan Radio

新日本无线株式会社

丝印：082N10LS；Package：TDSON-8；OptiMOS?? Power-Transistor

文件：441.9 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：082N10NS；Package：PG-TO220；StrongIRFETTM 2 Power-Transistor

文件：1.04566 Mbytes 页数：10 Pages

Infineon

英飞凌

丝印：082N10NS；Package：PG-TO220-3；StrongIRFETTM 2 Power-Transistor

文件：1.10419 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：082N65S3F；Package：D2PAK-3；MOSFET ??N?륝hannel, SUPERFET III, FRFET 650 V, 40 A, 82 m

文件：350.41 Kbytes 页数：10 Pages

ONSEMI

安森美半导体