丝印：074；Package：SOP14；LOW NOISE, J-FET INPUT OPERATIONAL AMPLIFIERS

FEATURES ●Wide Power Supply Range ±4 to ±18V ●Internal ESD Protection Human Body Model (HBM) ±2000V typ. ●High Input Resistance 1012Ω typ. ●Wide Temperature Range -40°C to 125°C ●Bipolar Technology ●High Slew Rate 13V/μs typ. ●Wide Unity Gain Bandwidth 3MHz typ. ●Package NJM072C/072CA/08

文件：1.84459 Mbytes 页数：21 Pages

NISSHINBO

日清纺微电子

丝印：074；Package：SSOP14；LOW NOISE, J-FET INPUT OPERATIONAL AMPLIFIERS

FEATURES ●Wide Power Supply Range ±4 to ±18V ●Internal ESD Protection Human Body Model (HBM) ±2000V typ. ●High Input Resistance 1012Ω typ. ●Wide Temperature Range -40°C to 125°C ●Bipolar Technology ●High Slew Rate 13V/μs typ. ●Wide Unity Gain Bandwidth 3MHz typ. ●Package NJM072C/072CA/08

文件：1.84459 Mbytes 页数：21 Pages

NISSHINBO

日清纺微电子

丝印：074；Package：TDFN-2X2-8AL；Linear Regulation Battery Charger

GENERAL DESCRIPTION The SGM41566 is designed for charging low capacity battery cell with factory-programmable current programmable in the range of 50mA to 750mA from loosen regulated power source. The device features low drop-out constant-current constant-voltage charging, weak battery pre-

文件：961.77 Kbytes 页数：21 Pages

SGMICRO

圣邦股份

丝印：074S；Package：DFN；Low Skew 1 to 4 Clock Buffer

Features • Low additive phase jitter RMS: 50fs • Extremely low skew outputs (50ps) • Low cost clock buffer • Packaged in 8-pin SOIC and 8-pin DFN, Pb-free • Input/Output clock frequency up to 200 MHz • Low power CMOS technology • Operating voltages of 1.8V to 3.3V • Extended temperature ra

文件：315.44 Kbytes 页数：12 Pages

RENESAS

瑞萨

丝印：074S；Package：DFN；Low Skew 1 to 4 Clock Buffer

Features • Low additive phase jitter RMS: 50fs • Extremely low skew outputs (50ps) • Low cost clock buffer • Packaged in 8-pin SOIC and 8-pin DFN, Pb-free • Input/Output clock frequency up to 200 MHz • Low power CMOS technology • Operating voltages of 1.8V to 3.3V • Extended temperature ra

文件：315.44 Kbytes 页数：12 Pages

RENESAS

瑞萨

丝印：074N15N；Package：TSON-8-3；OptiMOSTM 5 Power-Transistor, 150 V

Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • Very low reverse recovery charge (Qrr) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Ideal for high-frequency switching and synchronous rectificati

文件：976.07 Kbytes 页数：11 Pages

INFINEON

英飞凌

丝印：074A；Package：SOP14；LOW NOISE, J-FET INPUT OPERATIONAL AMPLIFIERS

FEATURES ●Wide Power Supply Range ±4 to ±18V ●Internal ESD Protection Human Body Model (HBM) ±2000V typ. ●High Input Resistance 1012Ω typ. ●Wide Temperature Range -40°C to 125°C ●Bipolar Technology ●High Slew Rate 13V/μs typ. ●Wide Unity Gain Bandwidth 3MHz typ. ●Package NJM072C/072CA/08

文件：1.84459 Mbytes 页数：21 Pages

NISSHINBO

日清纺微电子

丝印：074A；Package：SOP14；LOW NOISE, J-FET INPUT OPERATIONAL AMPLIFIERS

FEATURES ●Wide Power Supply Range ±4 to ±18V ●Internal ESD Protection Human Body Model (HBM) ±2000V typ. ●High Input Resistance 1012Ω typ. ●Wide Temperature Range -40°C to 125°C ●Bipolar Technology ●High Slew Rate 13V/μs typ. ●Wide Unity Gain Bandwidth 3MHz typ. ●Package NJM072C/072CA/08

文件：1.84421 Mbytes 页数：21 Pages

NJRC

日本无线

丝印：074A；Package：SSOP14；LOW NOISE, J-FET INPUT OPERATIONAL AMPLIFIERS

FEATURES ●Wide Power Supply Range ±4 to ±18V ●Internal ESD Protection Human Body Model (HBM) ±2000V typ. ●High Input Resistance 1012Ω typ. ●Wide Temperature Range -40°C to 125°C ●Bipolar Technology ●High Slew Rate 13V/μs typ. ●Wide Unity Gain Bandwidth 3MHz typ. ●Package NJM072C/072CA/08

文件：1.84421 Mbytes 页数：21 Pages

NJRC

日本无线

丝印：074A；Package：SSOP14；LOW NOISE, J-FET INPUT OPERATIONAL AMPLIFIERS

FEATURES ●Wide Power Supply Range ±4 to ±18V ●Internal ESD Protection Human Body Model (HBM) ±2000V typ. ●High Input Resistance 1012Ω typ. ●Wide Temperature Range -40°C to 125°C ●Bipolar Technology ●High Slew Rate 13V/μs typ. ●Wide Unity Gain Bandwidth 3MHz typ. ●Package NJM072C/072CA/08

文件：1.84459 Mbytes 页数：21 Pages

NISSHINBO

日清纺微电子