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ISPD06N80C3

N-ChannelMOSFETTransistor

•DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.9Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISPP06N80C3

N-ChannelMOSFETTransistor

•DESCRIPTION •Highpeakcurrentcapability •Ultralowgatecharge •Ultraloweffectivecapacitances •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.9Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperforma

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPA06N80C3

CoolMOS??PowerTransistor

CoolMOS™PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPA06N80C3

CoolMOSTMPowerTransistor

Features •Newrevolutionaryhighvoltagetechnology •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge •Ultraloweffectivecapacitances •Fullyisolatedpackage(250

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPA06N80C3

CoolMOSTMPowerTransistor

Features •Newrevolutionaryhighvoltagetechnology •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge •Ultraloweffectivecapacitances •Fullyisolatedpackage(250

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPA06N80C3

CoolMOS??PowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPD06N80C3

CoolMOS??PowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPD06N80C3

CoolMOSTMPowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPD06N80C3

N-ChannelMOSFETTransistor

•DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.9Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPD06N80C3

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO252 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

供应商型号品牌批号封装库存备注价格
INFINEON/英飞凌
24+
TO220F
39197
郑重承诺只做原装进口现货
询价
17
23+
TO-220F
6000
专注配单,只做原装进口现货
询价
17
24+
TO-220F
150
原装现货假一赔十
询价
FUJ
TO-220F
22+
6000
十年配单,只做原装
询价
FUJITSU/富士通
23+
TO-TO-220F
12300
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
FUJITSU/富士通
23+
TO-220F
6000
原装正品,支持实单
询价
FUJ
25+
TO-TO-220F
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
FUJI/富士电机
23+
TO-3P
50000
全新原装正品现货,支持订货
询价
FUJI/富士电机
24+
NA/
2453
优势代理渠道,原装正品,可全系列订货开增值税票
询价
Delta
22+
NA
12080
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询价
更多06N80C3其他被动元件供应商 更新时间2025-7-28 16:06:00