Heterostructure Field Effect Transistor (GaAs HFET)

250--4000 MHz, 12 dB 22.5 dBm GaAs HFET GPA The MMH3111NT1 is a general purpose amplifier that is internally input and output prematched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from

文件：468.79 Kbytes 页数：15 Pages

恩XP

包装：卷带（TR） 类别：电容器 薄膜电容器 描述：ACCU-F/P

KSS

京瓷

包装：卷带（TR） 类别：电容器 薄膜电容器 描述：ACCU-F/P

KSS

京瓷

Edge QAM Gain Stage

文件：747.63 Kbytes 页数：8 Pages

TriQuint