丝印：05N60；Package：SOT-89；N-Channel Enhancement Mode Power MOSFET

Features ⚫ Excellent package for good heat dissipation ⚫ Fully characterized avalanche voltage and current ⚫ ⚫ High density cell design for ultra RDS(on) VDS= 60V,ID= 5A RDS(on)

文件：656.68 Kbytes 页数：5 Pages

HUIXIN

慧芯电子

N-Channel 650 V (D-S) MOSFET

文件：1.99607 Mbytes 页数：9 Pages

VBSEMI

微碧半导体